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Measurement of Capacitances in Multigate Transistors by Coulomb Blockade SpectroscopyHOFHEINZ, Max; JEHL, Xavier; SANQUER, Marc et al.IEEE transactions on nanotechnology. 2008, Vol 7, Num 1, pp 74-78, issn 1536-125X, 5 p.Article

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High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETsKILCHYTSKA, V; ALVARADO, J; PUT, S et al.Microelectronics and reliability. 2012, Vol 52, Num 1, pp 118-123, issn 0026-2714, 6 p.Article

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Performance estimation of junctionless multigate transistorsLEE, Chi-Woo; FERAIN, Isabelle; AFZALIAN, Aryan et al.Solid-state electronics. 2010, Vol 54, Num 2, pp 97-103, issn 0038-1101, 7 p.Article

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A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless TransistorsJEON, D.-Y; PARK, S. J; MOUIS, M et al.Solid-state electronics. 2013, Vol 81, pp 113-118, issn 0038-1101, 6 p.Article

An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective massYU YUAN; BO YU; SONG, Jooyoung et al.Solid-state electronics. 2009, Vol 53, Num 2, pp 140-144, issn 0038-1101, 5 p.Article

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Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETsOTA, K; SAITOH, M; TANAKA, C et al.Solid-state electronics. 2014, Vol 91, pp 123-126, issn 0038-1101, 4 p.Article

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Junctionless Π-gate transistor with indium gallium arsenide channelGUO, H. X; ZHANG, X; ZHU, Z et al.Electronics letters. 2013, Vol 49, Num 6, pp 402-404, issn 0013-5194, 3 p.Article

The Impact of Substrate Bias on the Steep Subthreshold Slope in Junctionless MuGFETsSEUNG MIN LEE; JONG TAE PARK.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 11, pp 3856-3861, issn 0018-9383, 6 p.Article

Compact capacitance modeling of a 3-terminal FET at zero drain-source voltageINIGUEZ, Benjamin; MOLDOVAN, Oana.Solid-state electronics. 2010, Vol 54, Num 5, pp 520-523, issn 0038-1101, 4 p.Article

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